DocumentCode :
802822
Title :
Crystal silicon Fabry-Perot cavities deposited with dichlorosilane in a reduced pressure chemical vapour deposition reactor for thermal sensing
Author :
Chao, H.C. ; Neudeck, G.W.
Author_Institution :
Nat. Dong-Hwa Univ., Hualien, Taiwan
Volume :
31
Issue :
13
fYear :
1995
fDate :
6/22/1995 12:00:00 AM
Firstpage :
1101
Lastpage :
1102
Abstract :
A surface-normal Fabry-Perot (FP) thermal sensor with embedded multiple QW dielectric mirrors, was fabricated and evaluated using a single crystal merged silicon epitaxial lateral overgrowth (MELO) technique. The sensitivity of the sensor has been improved owing to the higher finesse
Keywords :
Fabry-Perot resonators; cavity resonators; elemental semiconductors; microsensors; mirrors; optical sensors; refractive index; silicon; silicon-on-insulator; temperature sensors; thermo-optical effects; vapour phase epitaxial growth; Fabry-Perot cavities; MELO technique; Si; chemical vapour deposition; crystalline Si; dichlorosilane; embedded multiple QW dielectric mirrors; merged epitaxial lateral overgrowth; reduced pressure CVD reactor; surface-normal Fabry-Perot sensor; thermal sensing;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950708
Filename :
392703
Link To Document :
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