Title :
In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMT with improved device reliability
Author :
Wu, C.S. ; Chan, Y.-J. ; Shien, J.-L. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
6/22/1995 12:00:00 AM
Abstract :
A novel In0.52(Al0.9Ga0.1)0.48As/In 0.53Ga0.477As HEMT on InP substrate is proposed and fabricated. By adding 10% Ga to the InAlAs layer, the quality of this quaternary InAlGaAs can be improved. This HEMT demonstrated a peak gm, of 295 mS/mm, an fT of 35 GHz, and an fmax of 76 GHz with a gate length of 0.8 μm. Furthermore. After 36 h of biasing stress, almost no change in drain current and transconductance was observed in the InAlGaAs HEMT. Which is a better result than obtainable in conventional InP HEMTs
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device reliability; 0.8 micron; 295 mS/mm; 35 GHz; 76 GHz; In0.52(Al0.9Ga0.1)0.48 As/In0.53Ga0.47As HEMT; InAlAs layer; InAlGaAs-InGaAs; InP; InP substrate; biasing stress; device reliability; drain current; quaternary InAlGaAs; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950728
