DocumentCode :
802883
Title :
Low resistance (~10-6 Ω cm2) ohmic contact to n-GaAs processed at 175°C
Author :
Hao, P.H. ; Wang, L.C. ; Wu, B.J.
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Volume :
31
Issue :
13
fYear :
1995
fDate :
6/22/1995 12:00:00 AM
Firstpage :
1106
Lastpage :
1108
Abstract :
A low resistance (10-6 Ω cm2) Au/Ge/Pd ohmic contact processed at 175°C has been developed to n-GaAs (n≃1018 cm-3). The ohmic contact formation mechanism can be rationalised in terms or the solid phase regrowth (SPR) principle and the interdiffusion of Au and Ge
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; contact resistance; gallium arsenide; germanium; gold; ohmic contacts; palladium; semiconductor-metal boundaries; 175 C; Au-Ge-Pd-GaAs; contact formation mechanism; interdiffusion; low resistance contact; n-GaAs; n-type; ohmic contact; solid phase regrowth;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950704
Filename :
392709
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=802883
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