• DocumentCode
    80290
  • Title

    InP DHBTs Having Lateral and Sidewall Collector Schottky Contacts

  • Author

    Cohen-Elias, D. ; Gavrilov, A. ; Cohen, S. ; Kraus, S. ; Ritter, D.

  • Author_Institution
    TowerJazz Semicond. Ltd., Migdal Haemek, Israel
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    163
  • Lastpage
    170
  • Abstract
    Indium-phosphide-based double heterojunction bipolar transistors having lateral and sidewall collector Schottky contacts are presented. The lateral collector structure reduces the base-collector fringing capacitance and can potentially enhance the high-frequency performance of the device. The fabrication process of the devices is described in detail.
  • Keywords
    III-V semiconductors; Schottky barriers; heterojunction bipolar transistors; indium compounds; DHBT; InP; base-collector fringing capacitance; double heterojunction bipolar transistors; fabrication process; lateral collector Schottky contact structure; sidewall collector Schottky contacts; Capacitance; Conductivity; Double heterojunction bipolar transistors; Equivalent circuits; Performance evaluation; Schottky barriers; Double heterojunction bipolar transistor (DHBT); Schottky contact; indium phosphide (InP);
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2224664
  • Filename
    6365253
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=80290