Title :
InP DHBTs Having Lateral and Sidewall Collector Schottky Contacts
Author :
Cohen-Elias, D. ; Gavrilov, A. ; Cohen, S. ; Kraus, S. ; Ritter, D.
Author_Institution :
TowerJazz Semicond. Ltd., Migdal Haemek, Israel
Abstract :
Indium-phosphide-based double heterojunction bipolar transistors having lateral and sidewall collector Schottky contacts are presented. The lateral collector structure reduces the base-collector fringing capacitance and can potentially enhance the high-frequency performance of the device. The fabrication process of the devices is described in detail.
Keywords :
III-V semiconductors; Schottky barriers; heterojunction bipolar transistors; indium compounds; DHBT; InP; base-collector fringing capacitance; double heterojunction bipolar transistors; fabrication process; lateral collector Schottky contact structure; sidewall collector Schottky contacts; Capacitance; Conductivity; Double heterojunction bipolar transistors; Equivalent circuits; Performance evaluation; Schottky barriers; Double heterojunction bipolar transistor (DHBT); Schottky contact; indium phosphide (InP);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2224664
