Title :
Comparing Radiation Effects in Gunn and Impatt Diodes
Author :
Anderson, Wayne A.
Author_Institution :
Rutgers University New Brunswick, New Jersey
Abstract :
Several Gunn and IMPATT diodes were subjected to neutron and gamma radiation while in oscillation. This provided data which could not be obtained by diode testing after irradiation. Non-passivated IMPATT diodes were most tolerant of neutron fluence effects. Gunn diodes were insignificantly influenced by this radiation flux but failed at lower fluence levels than did the IMPATT diodes.
Keywords :
Charge carrier lifetime; Diodes; Gallium arsenide; Gunn devices; Microwave circuits; Microwave devices; Neutrons; Radiation effects; Silicon; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326375
