Title :
High-efficiency AlGaAs/InGaAs heterostructure FET oscillators at V-band
Author :
Tsering, H.Q. ; Saunier, P.
Author_Institution :
Central Res. Lab., Texas Inst. Inc., Dallas, TX, USA
Abstract :
Quarter micron gate length heterostructure FETs used as oscillators have achieved record DC to RF conversion efficiencies at V-band. Devices with gatewidths of 50 mu m achieved an efficiency as high as 27% with output powers up to 20 mW in the 54 to 66 GHz frequency range.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; microwave oscillators; solid-state microwave devices; 20 mW; 27 percent; 50 micron; AlGaAs-InGaAs; DC to RF conversion efficiencies; EHF; MM-wave devices; V-band; gatewidths; heterostructure FET; high efficiency operation; millimetre wave oscillator; oscillators; quarter micron gate length; submicron gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901320
