DocumentCode
802982
Title
Power ICs in the saddle
Author
Baliga, B. Jayant
Author_Institution
North Carolina State Univ., Raleigh, NC
Volume
32
Issue
7
fYear
1995
fDate
7/1/1995 12:00:00 AM
Firstpage
34
Abstract
Improving the voltage, current, and switching capabilities of power electronics devices makes for more efficient control of power and energy. Interface with microprocessors for protection from unfriendly environments is also an asset. The author discusses the development of power electronic devices using MOSFETs, insulated gate transistors, and MOS controlled thyristors. The future of SiC based devices is also discussed
Keywords
MOS-controlled thyristors; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power integrated circuits; MOS controlled thyristors; MOSFET; SiC based devices; energy control; insulated gate transistors; microprocessors; power IC; power control; power electronics devices; protection; switching capabilities improvement; Analog circuits; CMOS analog integrated circuits; CMOS logic circuits; CMOS technology; Feedback circuits; Load flow; Power integrated circuits; Protection; Temperature; Very large scale integration;
fLanguage
English
Journal_Title
Spectrum, IEEE
Publisher
ieee
ISSN
0018-9235
Type
jour
DOI
10.1109/6.392802
Filename
392802
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