DocumentCode :
803154
Title :
VUV stimulated anti-Stokes Raman emission in inverted atomic selenium
Author :
Cooper, David G. ; Auyeung, Raymond C Y ; Feldman, Barry J.
Author_Institution :
Jaycor, Vienna, VA, USA
Volume :
26
Issue :
9
fYear :
1990
fDate :
9/1/1990 12:00:00 AM
Firstpage :
1536
Lastpage :
1545
Abstract :
Stimulated anti-Stokes Raman scattering at 145.7 nm in inverted Se is generated by photolysis of OCSe at 193 nm and the subsequent up-conversion of 205.1-nm pump radiation. The tuning profile is characterized with OCSe pressure, the energies and relative timing of the pump and photodissociation lasers, and CO and Ar buffer-gas pressure. The use of CO as a buffer gas is discovered to be detrimental to the anti-Stokes output. Sixteen competing stimulated emission channels are found to suppress anti-Stokes emission on exact 4p 4 1S0-4p3 5s3 P01 pump resonance
Keywords :
Raman lasers; optical frequency conversion; optical pumping; population inversion; selenium; stimulated Raman scattering; 193 nm; 205.1 nm; 4p4 1S0-4p3 5s3 P01 pump resonance; Co-Ar-Se; OCSe; Raman scattering; VUV stimulated anti-Stokes Raman emission; anti-Stokes output; buffer-gas pressure; inverted atomic Se; photodissociation lasers; pump lasers; pump radiation; stimulated emission channels; tuning profile; up-conversion; Argon; Atomic beams; Atomic measurements; Gas lasers; Laser excitation; Laser tuning; Pump lasers; Raman scattering; Stimulated emission; Timing;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.102633
Filename :
102633
Link To Document :
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