DocumentCode
803156
Title
Surface morphology of SIMOX wafers
Author
Nakashima, S. ; Izumi, Kiyotaka
Author_Institution
NTT LSI Lab., Kanagawa, Japan
Volume
25
Issue
2
fYear
1989
Firstpage
154
Lastpage
156
Abstract
The surface structure of SIMOX wafers produced by a 100 mA class oxygen implanted is investigated. Wafer temperature during implantation affects the surface morphology and thickness of the top silicon layers. The unevenness of the surface is closely related to cavities in the top silicon layers. Film thickness reduction is explained by the sublimation of SiO formed at the surface.
Keywords
integrated circuit technology; ion implantation; semiconductor technology; surface structure; 100 mA; O 2; SIMOX wafers; cavities; film thickness reduction; sublimation of SiO; surface morphology; surface structure; top Si layer; wafer temperature during implantation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890112
Filename
14282
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