Title :
Surface morphology of SIMOX wafers
Author :
Nakashima, S. ; Izumi, Kiyotaka
Author_Institution :
NTT LSI Lab., Kanagawa, Japan
Abstract :
The surface structure of SIMOX wafers produced by a 100 mA class oxygen implanted is investigated. Wafer temperature during implantation affects the surface morphology and thickness of the top silicon layers. The unevenness of the surface is closely related to cavities in the top silicon layers. Film thickness reduction is explained by the sublimation of SiO formed at the surface.
Keywords :
integrated circuit technology; ion implantation; semiconductor technology; surface structure; 100 mA; O 2; SIMOX wafers; cavities; film thickness reduction; sublimation of SiO; surface morphology; surface structure; top Si layer; wafer temperature during implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890112
