Title :
Charge-State Effects in Displacement Damage Invited Paper
Author :
Corbett, J.W. ; Bourgoin, J.C.
Author_Institution :
Physics Department Suny/Albany Albany, New York 12203
Abstract :
Charge-state effects in displacement damage in covalent semiconductors are reviewed. Specifically the influence on defect production mechanisms, configurations, mobility, annealing kinetics, interaction and dissociation are discussed. The recent theoretical work on the split-interstitial is mentioned, as is the new athermal migration mechanism.
Keywords :
Annealing; Contracts; Impurities; Kinetic theory; Laboratories; Lattices; Physics; Production; Semiconductor materials; Space charge;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326408
