Title :
Characterization of Total Safe Operating Area of Lateral DMOS Transistors
Author :
Moens, Peter ; Van den Bosch, Geert
Abstract :
The total safe operating area (SOA) of LDMOS transistors is discussed. It is shown that the transistors are subjected to different kinds of stresses, yielding a combination of electrical and thermal degradation and/or failure modes. A methodology to build the total SOA for LDMOS transistors is highlighted and is experimentally verified on a 40-V LDMOS implemented in a
Keywords :
MOSFET; hot carriers; power integrated circuits; 0.7 micron; 40 V; charge pumping; electrical degradation; energy capability; hot carriers; lateral LDMOS transistors; safe operating area; smart power technology; thermal degradation; transmission line pulsing; Auditory displays; Automotive engineering; Bipolar transistors; Breakdown voltage; Hot carriers; Power transmission lines; Semiconductor optical amplifiers; Temperature; Thermal degradation; Thermal stresses; Charge pumping (CP); LDMOS; energy capability; hot carriers; safe operating area (SOA); transmission line pulsing (TLP);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2006.882212
