TCAD Methodology for ESD Robustness Prediction of Smart Power ESD Devices

Author

Salaméro, Christophe ; Nolhier, Nicolas ; Gendron, Amaury ; Bafleur, Marise ; Besse, Patrice ; Zécri, Michel

Author_Institution

Univ. de Toulouse

Volume

6

Issue

3

fYear

2006

Firstpage

399

Lastpage

407

Abstract

This paper presents a new method to predict the electrostatic-discharge (ESD) protection robustness of a device with technology-in-computer-aided-design (TCAD) simulations. Tested on different devices and two Smart Power technologies, the results are validated through electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion

Keywords

electrostatic discharge; failure analysis; power semiconductor devices; semiconductor device models; semiconductor device reliability; technology CAD (electronics); ESD robustness prediction; TCAD methodology; electrical measurement; electrostatic discharge; failure analysis; failure current; smart power ESD devices; technology-in-computer-aided-design simulations; Electric variables measurement; Electrostatic discharge; Electrostatic measurements; Failure analysis; Power measurement; Predictive models; Protection; Robustness; Temperature; Testing; Electrostatic discharge (ESD); Smart Power technology; predictive simulation; robustness; technology in computer aided design (TCAD) simulation;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2006.881483

Filename

1717489