• DocumentCode
    803382
  • Title

    Electronic Recovery from Radiation Effects in CMNOS Structures

  • Author

    Cricchi, J.R. ; Barbe, D.F.

  • Author_Institution
    Westinghouse Electric Corporation Defense and Space Center Baltimore, Maryland 21203
  • Volume
    18
  • Issue
    6
  • fYear
    1971
  • Firstpage
    126
  • Lastpage
    130
  • Abstract
    We consider the effects of ionizing radiation on Complementary Metal-Nitride-Oxide-Silicon structures for oxide thicknesses in the range of 20-50Ã…. The bi-directional radiation-induced threshold-voltage shifts in CMNOS structures are interpreted in terms of charge accumulation at the nitride-oxide interface. The electronic recovery of pre-irradiation threshold voltage levels by carrier transport through the thin oxide is shown experimentally.
  • Keywords
    Bidirectional control; Inductors; Integrated circuit measurements; Ionizing radiation; MOS capacitors; Nitrogen; Radiation effects; Silicon; Thickness measurement; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1971.4326423
  • Filename
    4326423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=803382