Title :
Relaxation Phenomena Associated with Radiation-Induced Trapped Charge in Al2O3 MOS Devices
Author :
Micheletti, F.B. ; Kolondra, F.
Author_Institution :
RCA Laboratories Princeton, New Jersey 08540
Keywords :
Aluminum oxide; Capacitors; Channel bank filters; Electrons; Ionizing radiation; Laboratories; MOS devices; Silicon; Testing; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1971.4326424
