Title :
Characterization and design methodology for low-distortion MOSFET-C analog structures in multithreshold deep-submicrometer SOI CMOS technologies
Author :
Vancaillie, Laurent ; Kilchytska, Valeria ; Alvarado, Joaquin ; Cerdeira, Antonio ; Flandre, Denis
Author_Institution :
Lab. de Microelectronique, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
The harmonic distortion (HD) of MOSFETs operating in the triode regime is thoroughly investigated for the different device types of a multi-Vth deep-submicrometer 0.12-μm silicon-on-insulator (SOI) CMOS process. The measurements performed in a wide temperature range (25°C-220°C) and on devices with different oxide thicknesses and channel dopings help to identify the relative impact of the different physical mechanisms at the origin of HD. A measurement-based and design-oriented methodology is finally developed to compare device types, biases and configurations responding to practical design targets.
Keywords :
CMOS analogue integrated circuits; MOSFET; harmonic distortion; semiconductor device measurement; silicon-on-insulator; 0.12 micron; 25 to 220 C; CMOS analog integrated circuits; MOSFET-C analog structures; channel dopings; deep-submicrometer technologies; harmonic distortion; oxide thicknesses; semiconductor device measurements; silicon on insulator technology; CMOS process; CMOS technology; Design methodology; Distortion measurement; Harmonic distortion; High definition video; MOSFET circuits; Performance evaluation; Silicon on insulator technology; Thickness measurement; CMOS analog integrated circuits; MOSFETs; continuous time filters; harmonic distortion; semiconductor device measurements; silicon-on-insulator (SOI) technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.861725
