DocumentCode
803574
Title
Hot rocks [single crystal diamond for power semiconductor devices]
Author
Hadlington, S.
Volume
51
Issue
4
fYear
2005
fDate
4/1/2005 12:00:00 AM
Firstpage
30
Lastpage
33
Abstract
This article describes the production, using chemical vapour deposition, of single crystal synthetic diamonds. It then discusses their practical use in semiconductor devices. Diamond is a wide band gap semiconductor with high breakdown voltage, high saturation velocity, high carrier mobility, and high thermal conductivity. In addition it is extremely radiation hard. Diamond semiconductors are ideal for high-power, high-frequency electronic applications.
Keywords
carrier mobility; chemical vapour deposition; diamond; elemental semiconductors; power semiconductor devices; radiation hardening (electronics); semiconductor device breakdown; thermal conductivity; wide band gap semiconductors; C; carrier mobility; chemical vapour deposition; high breakdown voltage; high frequency semiconductors; high power semiconductors; radiation hard material; saturation velocity; single crystal synthetic diamonds; thermal conductivity; wide band gap semiconductor;
fLanguage
English
Journal_Title
IEE Review
Publisher
iet
ISSN
0953-5683
Type
jour
DOI
10.1049/ir:20050402
Filename
1428379
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