DocumentCode :
803574
Title :
Hot rocks [single crystal diamond for power semiconductor devices]
Author :
Hadlington, S.
Volume :
51
Issue :
4
fYear :
2005
fDate :
4/1/2005 12:00:00 AM
Firstpage :
30
Lastpage :
33
Abstract :
This article describes the production, using chemical vapour deposition, of single crystal synthetic diamonds. It then discusses their practical use in semiconductor devices. Diamond is a wide band gap semiconductor with high breakdown voltage, high saturation velocity, high carrier mobility, and high thermal conductivity. In addition it is extremely radiation hard. Diamond semiconductors are ideal for high-power, high-frequency electronic applications.
Keywords :
carrier mobility; chemical vapour deposition; diamond; elemental semiconductors; power semiconductor devices; radiation hardening (electronics); semiconductor device breakdown; thermal conductivity; wide band gap semiconductors; C; carrier mobility; chemical vapour deposition; high breakdown voltage; high frequency semiconductors; high power semiconductors; radiation hard material; saturation velocity; single crystal synthetic diamonds; thermal conductivity; wide band gap semiconductor;
fLanguage :
English
Journal_Title :
IEE Review
Publisher :
iet
ISSN :
0953-5683
Type :
jour
DOI :
10.1049/ir:20050402
Filename :
1428379
Link To Document :
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