• DocumentCode
    803599
  • Title

    Energy loading effects in the scaling of atomic xenon lasers

  • Author

    Ohwa, Mieko ; Kushner, Mark J.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, Champaign, IL, USA
  • Volume
    26
  • Issue
    9
  • fYear
    1990
  • fDate
    9/1/1990 12:00:00 AM
  • Firstpage
    1639
  • Lastpage
    1646
  • Abstract
    The intrinsic power efficiency of the atomic xenon (5d→6p) infrared (1.73-3.65-μm) laser is sensitive to the rate of pumping due to electron collision mixing of the laser levels. Long-duration pumping at moderate power deposition may therefore result in higher energy efficiencies than pumping at higher powers. The consequences of high energy deposition (hundreds of joules per atmosphere) during long pumping pulses (hundreds of microseconds) on the intrinsic power and energy efficiency and optimum power deposition of the atomic xenon laser are examined. The dominant effect of high energy loading, gas heating, causes an increase in the electron collision mixing of the laser levels. The optimum power deposition for a given gas density therefore shifts to lower values with increasing gas temperature
  • Keywords
    gas lasers; infrared sources; laser transitions; xenon; 1.73 to 3.65 micron; 5d→6p laser transition; IR lasers; atomic Xe laser scaling; electron collision mixing; energy efficiencies; energy efficiency; energy loading; gas density; gas heating; gas temperature; intrinsic power efficiency; laser levels; laser pumping rate; long pumping pulses; moderate power deposition; Atom lasers; Atomic beams; Atomic layer deposition; Electrons; Laser excitation; Laser modes; Power lasers; Pulsed laser deposition; Pump lasers; Xenon;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.102643
  • Filename
    102643