• DocumentCode
    80361
  • Title

    Forming Kinetics in \\hbox {HfO}_{2} -Based RRAM Cells

  • Author

    Lorenzi, Paolo ; Rao, Rosario ; Irrera, Fernanda

  • Author_Institution
    Dipt. di Ing. dell´´Inf., Sapienza Univ. of Rome, Rome, Italy
  • Volume
    60
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    438
  • Lastpage
    443
  • Abstract
    In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated.
  • Keywords
    electroforming; hafnium compounds; random-access storage; HfO2; RRAM cells; device area; electrode materials; electroforming; forming kinetics; resistive-RAM cells; voltage pulse amplitude; Electrodes; Hafnium compounds; Kinetic theory; Resistance; Temperature measurement; Tin; Voltage measurement; $hbox{HfO}_{2}$; Area scaling; MIM device; electrodes; forming kinetics; forming pulse amplitude; read disturb; resistive RAM (RRAM); temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2012.2227324
  • Filename
    6365260
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=80361