DocumentCode :
80361
Title :
Forming Kinetics in 
-Based RRAM Cells
Author :
Lorenzi, Paolo ; Rao, Rosario ; Irrera, Fernanda
Author_Institution :
Dipt. di Ing. dell´´Inf., Sapienza Univ. of Rome, Rome, Italy
Volume :
60
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
438
Lastpage :
443
Abstract :
In this paper, key aspects of the electroforming in resistive-RAM cells with HfO2 are addressed. Specifically, transient measurements were performed on extremely short timescales to characterize systematically the forming time as a function of the voltage pulse amplitude, temperature, electrode materials, and device area. An analytical model was developed, accounting for the investigated experimental parameters. Impact of the forming (and SET) waveform on read disturb is also investigated.
Keywords :
electroforming; hafnium compounds; random-access storage; HfO2; RRAM cells; device area; electrode materials; electroforming; forming kinetics; resistive-RAM cells; voltage pulse amplitude; Electrodes; Hafnium compounds; Kinetic theory; Resistance; Temperature measurement; Tin; Voltage measurement; $hbox{HfO}_{2}$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2227324
Filename :
6365260
Link To Document :
