Transient Radiation Effects in Silicon Diodes near and in Avalanche Breakdown

Results of experiments on silicon diodes with a range of breakdown voltages from 5.7 to 85 volts are presented for ionizing dose rates from 107 to 8x109 rads/s for a wide variety of bias conditions near and in avalanche breakdown. Results of experiments to determine the effectiveness of various hardening techniques are also presented. The transient response of especially designed neutron hardened, temperature compensated, voltage reference diodes are determined, for the purpose of evaluating the consistency of permanent neutron and transient ionizing hardening techniques. The effect of the temperature compensating junction for OTC diodes on transient current is presented and the transient response of voltage regulating diodes is evaluated as a function of the circuit providing bias current to the diode as well as the impedance of the circuit that the reference diode drives. A model that is appropriate to diodes operating in avalanche breakdown and in an ionizing radiation environment is also presented.