DocumentCode :
803614
Title :
Electron beam lithography in nanoscale fabrication: recent development
Author :
Tseng, Ampere A. ; Kuan Chen ; Chen, Chii D. ; Ma, Kung J.
Author_Institution :
Dept. of Mech. & Aerosp. Eng., Arizona State Univ., Tempe, AZ, USA
Volume :
26
Issue :
2
fYear :
2003
fDate :
4/1/2003 12:00:00 AM
Firstpage :
141
Lastpage :
149
Abstract :
Miniaturization is the central theme in modern fabrication technology. Many of the components used in modern products are getting smaller and smaller. In this paper, the recent development of the electron beam lithography technique is reviewed with an emphasis on fabricating devices at the nanometer scale. Because of its very short wavelength and reasonable energy density characteristics, e-beam lithography has the ability to fabricate patterns having nanometer feature sizes. As a result, many nanoscale devices have been successfully fabricated by this technique. Following an introduction of this technique, recent developments in processing, tooling, resist, and pattern controlling are separately examined and discussed. Examples of nanodevices made by several different e-beam lithographic schemes are given, to illustrate the versatility and advancement of the e-beam lithography technique. Finally, future trends in this technique are discussed.
Keywords :
electron beam lithography; electron resists; integrated circuit technology; nanolithography; proximity effect (lithography); reviews; direct writing; e-beam lithography; e-beam resists; electron beam lithography technique; energy density characteristics; nanometer feature sizes; nanometer scale devices; nanoscale fabrication; pattern control; projection printing; tooling; Electron beams; Electron optics; Electronics industry; Fabrication; Lithography; Nanoscale devices; Optical refraction; Printing; Resists; Writing;
fLanguage :
English
Journal_Title :
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
1521-334X
Type :
jour
DOI :
10.1109/TEPM.2003.817714
Filename :
1236879
Link To Document :
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