DocumentCode :
803636
Title :
Radiation Effects in Electroluminescent Diodes
Author :
Barnes, C.E.
Author_Institution :
Sandia Laboratories Albuquerque, New Mexico
Volume :
18
Issue :
6
fYear :
1971
Firstpage :
322
Lastpage :
331
Abstract :
Following a brief discussion of the operating characteristics of light emitting diodes (LED´s), radiation effects in these devices are reviewed. Recent results on neutron damage effects in SiC LED´s are also presented. Based on this review, criteria are developed for radiation insensitivity of LED´s.
Keywords :
Atomic layer deposition; Costs; Electroluminescence; Gallium arsenide; Light emitting diodes; Manufacturing; Materials science and technology; Radiation effects; Semiconductor diodes; Silicon carbide;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4326450
Filename :
4326450
Link To Document :
بازگشت