Evaluation of Combined Radiation Effects to Transistors

A method is present which systematically uses multiple linear regression to predict the current gain response of bipolar transistors to gamma and neutron radiation both separately and collectively. The results indicated that the important parameters needed to predict the radiation response can be statistically determined from a large number of parameters provided those needed for predictions are included in this set. To predict neutron response only pre-rad electrical measurements were needed; while to predict the response to gamma radiation, electrical measurements after some initial gamma irradiation was required. The response to the total neutron and gamma environment was predicted assuming that the increases in base currents due to the environments separately were independent of each other.