Neutron Damage Effects in Step Recovery Diode Frequency Multipliers

The Step-Recovery Diode (SRD) frequency multiplier has been studied both theoretically and experimentally. The results show that the multiplier is quite susceptible to neutron damage if self-bias is used (which is usually the case), and it is recommended either that the preradiation lifetime should be deliberately shortened or that voltage bias be considered in a radiation environment. The self-bias problem is found to be due to an increase in recombination current brought on by a reduction in minority carrier lifetime with neutron fluence. This study also derives the ultimate failure fluence as a function of multiplier parameters for these multipliers in general.