A new low-noise 100-MHz balanced relaxation oscillator

Author

Sneep, Jack G. ; Verhoeven, Chris J M

Volume

25

Issue

3

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

692

Lastpage

698

Abstract

A novel fully balanced architecture for high-frequency, low-noise relaxation oscillators is presented. Differential operation is achieved with the use of two grounded capacitors utilizing the circuit parasitics. Bypassing of the regenerative memory function in the oscillator benefits both high-speed and low-noise operation. A detailed analysis of phase noise in relaxation oscillators is performed. Results obtained from a test chip have verified the viability of the new oscillator and the developed phase-noise theory. The oscillator circuit has been realized in a medium-frequency (f_τ=3 GHz) bipolar process. The tuning range extends to 150 MHz. At an oscillation frequency of 115 MHz, measured phase noise was -118 dBc/Hz at 1-MHz distance from the carrier

Keywords

electron device noise; radiofrequency oscillators; relaxation oscillators; 100 to 150 MHz; balanced relaxation oscillator; bipolar process; circuit parasitics; grounded capacitors; low-noise operation; oscillation frequency; phase noise; phase-noise theory; regenerative memory function; relaxation oscillators; tuning range; Capacitors; Circuit optimization; Circuit testing; Frequency measurement; Noise measurement; Oscillators; Performance analysis; Phase measurement; Phase noise; Tuning;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.102662

Filename

102662