DocumentCode :
803733
Title :
Role of Emitter Area in Neutron-Hardened Transistor Design
Author :
Smith, Daniel M. ; Hahn, Larry A.
Author_Institution :
Semiconductor Research and Development Laboratories Texas Instruments Incorporated MS 86; PO Box 5012; Dallas, Texas 75222
Volume :
18
Issue :
6
fYear :
1971
Firstpage :
393
Lastpage :
396
Abstract :
Using Hauser´s equation for the current dependence of effective emitter area in Hahn´s epitaxial transistor model, it is predicted that emitter debiasing appreciably increases the equilibrium collector resistance of a transistor having a structure typical of neutron-hardened transistors. To experimentally determine whether debiasing is as severe as predicted, a small transistor and an adjacent emitter-shaped resistor were fabricated on the same chip. Near coincidence of the emitter-shaped resistor I-V characteristic with the transistor saturation locus, before and after irradiation to neutron fluences up to 5× 1014 n/cm2 (E > 10 KeV), demonstrates that emitter debiasing is not important in determining the saturation locus (onset of hFE falloff with collector current) in transistors having a moderate emitter stripe width (2 mils). It is concluded that extremely narrow emitter stripe widths are not needed for neutron-hardened transistors.
Keywords :
Equations; Geometry; Instruments; Laboratories; Neutrons; Predictive models; Research and development; Resistors; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1971.4326459
Filename :
4326459
Link To Document :
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