Title :
Direct observation of worst-bit leakage currents of DRAM
Author :
Mori, Yuki ; Kamohara, Shiro ; Moniwa, Masahiro ; Ohyu, Kiyonori ; Yamanaka, Toshiaki ; Yamada, Ren-ichi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
We build a method for measuring leakage current of anomalously leaky cells (tail cells) in dynamic random access memories. We find that the traps in tail cells are at a region of stronger electric field in the p-n junction and their energy levels are nearer the midgap than the respective values for average cells.
Keywords :
DRAM chips; electric fields; energy states; leakage currents; p-n junctions; DRAM; anomalously leaky cells; dynamic random access memories; electric field; energy levels; p-n junction; tail cells; worst-bit leakage currents; Circuit simulation; Current measurement; DRAM chips; Equivalent circuits; Leakage current; Probability distribution; Random access memory; Statistical analysis; Tail; Testing; Dynamic random access memories (DRAMs); junction leakage; retention time; test element group (TEG);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.862245
