DocumentCode
803774
Title
A New Propagation Delay Time Bridge for the Study of Displacement Damage Effects in Bipolar Transistors
Author
Sullivan, W.H. ; Weinlein, J.H.
Author_Institution
Sandia Laboratories Albuquerque, New Mexico
Volume
18
Issue
6
fYear
1971
Firstpage
420
Lastpage
428
Abstract
An entirely new bridge circuit for the measurement of the junction transistors total propagation delay time is described. Unlike previous methods, this bridge is calibrated in time units and thus it provides a direct readout of delay time. An experiment to evaluate the bridge as a one-test acceptance screening tool in neutron hardness assurance programs is described. Finally, a very brief discussion of propagation delay time and its interpretation is presented as an appendix.
Keywords
Bipolar transistors; Bridge circuits; Degradation; Delay effects; Displacement measurement; Laboratories; Neutrons; Propagation delay; Radiation effects; Time measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1971.4326463
Filename
4326463
Link To Document