• DocumentCode
    803774
  • Title

    A New Propagation Delay Time Bridge for the Study of Displacement Damage Effects in Bipolar Transistors

  • Author

    Sullivan, W.H. ; Weinlein, J.H.

  • Author_Institution
    Sandia Laboratories Albuquerque, New Mexico
  • Volume
    18
  • Issue
    6
  • fYear
    1971
  • Firstpage
    420
  • Lastpage
    428
  • Abstract
    An entirely new bridge circuit for the measurement of the junction transistors total propagation delay time is described. Unlike previous methods, this bridge is calibrated in time units and thus it provides a direct readout of delay time. An experiment to evaluate the bridge as a one-test acceptance screening tool in neutron hardness assurance programs is described. Finally, a very brief discussion of propagation delay time and its interpretation is presented as an appendix.
  • Keywords
    Bipolar transistors; Bridge circuits; Degradation; Delay effects; Displacement measurement; Laboratories; Neutrons; Propagation delay; Radiation effects; Time measurement;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1971.4326463
  • Filename
    4326463