An L-band ultra-low-power-consumption monolithic low-noise amplifier

Author

Nakatsugawa, Masashi ; Yamaguchi, Yo ; Muraguchi, Masahiro

Author_Institution

NTT Wireless Syst. Lab., Kanagawa, Japan

Volume

43

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1745

Lastpage

1750

Abstract

A low-power consumption variable-gain low-noise amplifier (LNA) is demonstrated. To achieve low noise, low distortion, and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs MESFET (DFET) is employed. The EFET is superior to the DFET in its gain and noise figure performance while the DFET offers good intermodulation distortion performance. The advantages of both types of FET´s are combined in the developed LNA. It shows excellent performance with an NF of 2.0 dB, a gain of 12.2 dB, and an IP₃ of 5.1 dBm at 1.9 GHz. The demonstrated performance satisfies the specifications of the Japanese Personal Handyphone System even at the ultra-low power consumption of 2.0 mW

Keywords

III-V semiconductors; MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; digital radio; gallium arsenide; integrated circuit noise; intermodulation distortion; mobile radio; personal communication networks; 1.9 GHz; 12.2 dB; 2.0 dB; 2.0 mW; GaAs; L-band; cascode connection; depletion-mode MESFET; enhancement-mode MESFET; intermodulation distortion performance; low-noise amplifier; noise figure performance; personal handyphone system; power consumption; variable-gain amplifier; Energy consumption; FETs; Gallium arsenide; Intermodulation distortion; L-band; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Performance gain;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.392948

Filename

392948