Title :
An L-band ultra-low-power-consumption monolithic low-noise amplifier
Author :
Nakatsugawa, Masashi ; Yamaguchi, Yo ; Muraguchi, Masahiro
Author_Institution :
NTT Wireless Syst. Lab., Kanagawa, Japan
fDate :
7/1/1995 12:00:00 AM
Abstract :
A low-power consumption variable-gain low-noise amplifier (LNA) is demonstrated. To achieve low noise, low distortion, and low power consumption simultaneously, a cascode connection between an enhancement-mode GaAs MESFET (EFET) and a depletion-mode GaAs MESFET (DFET) is employed. The EFET is superior to the DFET in its gain and noise figure performance while the DFET offers good intermodulation distortion performance. The advantages of both types of FET´s are combined in the developed LNA. It shows excellent performance with an NF of 2.0 dB, a gain of 12.2 dB, and an IP3 of 5.1 dBm at 1.9 GHz. The demonstrated performance satisfies the specifications of the Japanese Personal Handyphone System even at the ultra-low power consumption of 2.0 mW
Keywords :
III-V semiconductors; MESFET integrated circuits; UHF amplifiers; UHF integrated circuits; digital radio; gallium arsenide; integrated circuit noise; intermodulation distortion; mobile radio; personal communication networks; 1.9 GHz; 12.2 dB; 2.0 dB; 2.0 mW; GaAs; L-band; cascode connection; depletion-mode MESFET; enhancement-mode MESFET; intermodulation distortion performance; low-noise amplifier; noise figure performance; personal handyphone system; power consumption; variable-gain amplifier; Energy consumption; FETs; Gallium arsenide; Intermodulation distortion; L-band; Low-noise amplifiers; MESFETs; Noise figure; Noise measurement; Performance gain;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
