DocumentCode :
803919
Title :
Transistor-only frequency-selective circuits
Author :
Pu, Lih-Jiuan ; Tsividis, Yannis P.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume :
25
Issue :
3
fYear :
1990
fDate :
6/1/1990 12:00:00 AM
Firstpage :
821
Lastpage :
832
Abstract :
The possibility of implementing frequency-selective circuits using only MOS transistors is considered. The advantages of such circuits are small chip area, good matching properties for individual elements, a potential for very high frequency of operation, and suitability for fabrication using standard digital VLSI processes. Disadvantages include the implementation of automatic tuning schemes that reliably eliminate unpredictabilities and variations, device modeling difficulties of common simulators, and nonlinearity cancellation. A procedure for the topology development of filters in which transistors are used as URC elements is presented together with a technique which uses transistors as capacitors, along with first-order correction for the nonidealities of such `capacitors´ and of the active elements. Measured results from three experimental chips are reported in the 1-100-MHz range
Keywords :
MOS integrated circuits; VLSI; active filters; digital integrated circuits; field effect transistor circuits; insulated gate field effect transistors; 1 to 100 MHz; MOS transistors; URC elements; automatic tuning; chip area; device modeling difficulties; filters; first-order correction; frequency-selective circuits; matching properties; nonlinearity cancellation; standard digital VLSI; topology development; Capacitors; Circuit optimization; Circuit simulation; Fabrication; Frequency; MOSFETs; Topology; Tuning; VHF circuits; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.102681
Filename :
102681
Link To Document :
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