Title :
Transistor-only frequency-selective circuits
Author :
Pu, Lih-Jiuan ; Tsividis, Yannis P.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
The possibility of implementing frequency-selective circuits using only MOS transistors is considered. The advantages of such circuits are small chip area, good matching properties for individual elements, a potential for very high frequency of operation, and suitability for fabrication using standard digital VLSI processes. Disadvantages include the implementation of automatic tuning schemes that reliably eliminate unpredictabilities and variations, device modeling difficulties of common simulators, and nonlinearity cancellation. A procedure for the topology development of filters in which transistors are used as URC elements is presented together with a technique which uses transistors as capacitors, along with first-order correction for the nonidealities of such `capacitors´ and of the active elements. Measured results from three experimental chips are reported in the 1-100-MHz range
Keywords :
MOS integrated circuits; VLSI; active filters; digital integrated circuits; field effect transistor circuits; insulated gate field effect transistors; 1 to 100 MHz; MOS transistors; URC elements; automatic tuning; chip area; device modeling difficulties; filters; first-order correction; frequency-selective circuits; matching properties; nonlinearity cancellation; standard digital VLSI; topology development; Capacitors; Circuit optimization; Circuit simulation; Fabrication; Frequency; MOSFETs; Topology; Tuning; VHF circuits; Very large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of