• DocumentCode
    80410
  • Title

    Fabrication and characterisation of high sensitivity copper-copper oxide-copper (Cu-CuO-Cu) metal-insulator-metal tunnel junctions

  • Author

    Abdel-Rahman, Mohamed ; Syaryadhi, M. ; Debbar, Nacer

  • Author_Institution
    Prince Sultan Adv. Technol. Res. Inst. (PSATRI), King Saud Univ., Riyadh, Saudi Arabia
  • Volume
    49
  • Issue
    5
  • fYear
    2013
  • fDate
    February 28 2013
  • Firstpage
    363
  • Lastpage
    364
  • Abstract
    A report is presented on the realisation and characterisation of symmetrical metal-insulator-metal (MIM) diodes using the new material combination: copper-copper oxide-copper (Cu-CuO-Cu). The MIM diodes, having contact areas of 2 × 2 ×m2, were fabricated using electron beam lithography and sputter deposition. The MIM diodes exhibited an absolute sensitivity as high as 4.497 V- 1.
  • Keywords
    MIM structures; electron beam lithography; sputter deposition; Cu-CuO-Cu; electron beam lithography; high sensitivity copper-copper oxide-copper; metal-insulator-metal tunnel junctions; size 2 mum; sputter deposition; symmetrical metal-insulator-metal diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el.2012.4222
  • Filename
    6473960
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=80410