Characterization of a 14 in × 17 in flat panel detector based on ion shower doped a-Si : H P-I-N diodes

Author

Kim, Hee Joon ; Cho, Gyuseong

Author_Institution

Nucl. & Quantum Eng. Dept., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea

Volume

50

Issue

5

fYear

2003

Firstpage

1654

Lastpage

1658

Abstract

In recent years, it has become technically and economically feasible to use solid-state detector technology to display, store and transfer X-ray images. In this paper, we report the performance of a 33 cm × 41 cm amorphous silicon flat panel detector (FPD) based on an ion shower doped P-I-N photodiode/thin-film transistor (TFT) array. The p-layer of a diode is formed by an ion shower doping method instead of the conventional plasma-enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported for general imaging metrics such as modulation transfer function, noise power spectrum and detective quantum efficiency. The presampling MTF was found to be 0.51 and 0.26 at 1 lp/mm and 2 lp/mm. The measured DQE at 1 lp/mm and 2 lp/mm was 0.35 and 0.17.

Keywords

p-i-n photodiodes; silicon radiation detectors; thin film transistors; P-I-N diodes; Si; a-Si; ion shower; modulation transfer function; noise power spectrum; p-layer; quantum efficiency; thin-film transistor; Amorphous silicon; Flat panel displays; P-i-n diodes; Plasma measurements; Power generation economics; Solid state circuits; Thin film transistors; X-ray detection; X-ray detectors; X-ray imaging;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.817410

Filename

1236981