Regrowth of GaAs quantum wells on GaAs liftoff films ´van der Waals bonded´ to silicon substrates

Author

Yablonovitch, E. ; Kash, K. ; Gmitter, T.J. ; Florez, L.T. ; Harbison, J.P. ; Colas, E.

Author_Institution

Navesink Res. Center, Bellcore, Red Bank, NJ, USA

Volume

25

Issue

2

fYear

1989

Firstpage

171

Abstract

The authors report the first epitaxial regrowth on lifted-off large-area micron-thick single-crystal GaAs films bonded by surface tension (van der Waals) forces to a foreign substrate. GaAs quantum wells grown by MOCVD on a GaAs film which had been van der Waals bonded to an Si substrate showed linewidths and luminescence efficiencies comparable to those grown directly on GaAs substrates.<>

Keywords

III-V semiconductors; chemical vapour deposition; elemental semiconductors; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; semiconductor technology; silicon; vapour phase epitaxial growth; 1 micron; GaAs liftoff films; GaAs on Si; GaAs quantum wells; GaAs-GaAs epitaxy; GaAs-Si bonding; MOCVD; MOVPE; Si substrate; epitaxial regrowth; linewidths; luminescence efficiencies; semiconductor epitaxial films; semiconductors; single-crystal GaAs films bonded; van der Waals bonded; CVD; Epitaxial growth; Gallium compounds; Semiconductor device fabrication; Semiconductor epitaxial layers; Semiconductor growth; Silicon;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890123

Filename

14293