A 0.25-V 28-nW 58-dB Dynamic Range Asynchronous Delta Sigma Modulator in 130-nm Digital CMOS Process

In this paper, we present a single-bit clock-less asynchronous delta-sigma modulator (ADSM) operating at just 0.25 V power supply. Several circuit approaches were employed to enable such low-voltage operation and maintain high performance. One approach involved utilizing bulk-driven transistors in subthreshold region with transconductance-enhancement topology. Another approach was to employ distributed transistor layout structure to mitigate the effect of low output impedance due to halo drain implants employed in today´s digital CMOS process. The ADSM achieved a characteristic center frequency of 630 Hz. It had an effective signal-to-noise-plus-distortion ratio (SNDR) of 58 dB or effective number of bits (ENOB) 9 b and just 28-nW power dissipation. A detailed analytical model capturing the effect of nonidealities of the individual circuit components is also presented for the first time with a close agreement with experimental results.