DocumentCode :
804391
Title :
The Competitive Edge
Author :
Sunshine, Richard A.
Author_Institution :
David Sarnoff Research Center, RCA Laboratories, Princeton, N. J. 08540.
Issue :
3
fYear :
1974
Firstpage :
109
Lastpage :
109
Abstract :
In this paper it is demonstrated that by imaging and studying the recombination radiation emitted by an operating power transistor, much useful information about the current distribution can be obtained in a routine manner. This information includes a semi-quantitative measure of the degree current crowding to one region of the pellet as a result of voltage losses in the metallization and thermal gradients, the effectiveness of the ballasting in preventing both thermally stable current crowding and hot spot formation, and the degree of crowding toward the edge of the emitter as a result of resistive losses in the base under the emitter. In general this detailed information cannot be obtained by any other method, and is very useful to device engineers in improving power transistor design.
Keywords :
Current distribution; Current measurement; Design engineering; Electronic ballasts; Loss measurement; Metallization; Power transistors; Proximity effect; Thermal resistance; Voltage;
fLanguage :
English
Journal_Title :
Industrial Electronics and Control Instrumentation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9421
Type :
jour
DOI :
10.1109/TIECI.1974.351199
Filename :
4159003
Link To Document :
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