Title :
Preferential Electron Trapping by Te Atoms in Ge(Li) Detectors
Author :
Henck, R. ; Schoenmaekers, W.K.
Author_Institution :
Centre de Recherches Nucléaires, Strasbourg-France
Abstract :
In germanium, Te is a double donor. Te, when capturing one electron, is still repulsive for holes, and has no influence on the recombination lifetime of electrons in p-type Ge. In accordance with what one should expect, measurements with collimated beams of ¿-rays, show that Te is a preferential electron trap.
Keywords :
Atomic measurements; Charge carrier processes; Detectors; Electron beams; Electron traps; Germanium; Impurities; Spontaneous emission; Tellurium; Temperature dependence;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.1972.4326528