• DocumentCode
    804432
  • Title

    Preferential Electron Trapping by Te Atoms in Ge(Li) Detectors

  • Author

    Henck, R. ; Schoenmaekers, W.K.

  • Author_Institution
    Centre de Recherches Nucléaires, Strasbourg-France
  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • Firstpage
    336
  • Lastpage
    340
  • Abstract
    In germanium, Te is a double donor. Te, when capturing one electron, is still repulsive for holes, and has no influence on the recombination lifetime of electrons in p-type Ge. In accordance with what one should expect, measurements with collimated beams of ¿-rays, show that Te is a preferential electron trap.
  • Keywords
    Atomic measurements; Charge carrier processes; Detectors; Electron beams; Electron traps; Germanium; Impurities; Spontaneous emission; Tellurium; Temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326528
  • Filename
    4326528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=804432