• DocumentCode
    804468
  • Title

    Metal-Oxide-Semiconductor X-Ray Detectors

  • Author

    Ciarlo, D.R. ; Kalibjian, R. ; Mayeda, K. ; Boster, T.A.

  • Author_Institution
    Lawrence Livermore Laboratory, University of California Livermore, California 94550
  • Volume
    19
  • Issue
    1
  • fYear
    1972
  • Firstpage
    350
  • Lastpage
    355
  • Abstract
    Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three functions of 1) detection, 2) memory, and 3) readout are integrated into one semiconductor chip.
  • Keywords
    Aluminum; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Electrons; Ionizing radiation; Radiation effects; Silicon; Voltage; X-ray detectors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326531
  • Filename
    4326531