DocumentCode
804468
Title
Metal-Oxide-Semiconductor X-Ray Detectors
Author
Ciarlo, D.R. ; Kalibjian, R. ; Mayeda, K. ; Boster, T.A.
Author_Institution
Lawrence Livermore Laboratory, University of California Livermore, California 94550
Volume
19
Issue
1
fYear
1972
Firstpage
350
Lastpage
355
Abstract
Metal-oxide-semiconductor (MOS) devices have been used for detecting low-energy (2 to 20 keV) x rays for incident fluences of 10-4 to 10-1 cal/cm2 (or dosage in the device of 103 to 106 rads) in a bent-crystal spectrometer application. An attractive feature of the detector is that the three functions of 1) detection, 2) memory, and 3) readout are integrated into one semiconductor chip.
Keywords
Aluminum; Capacitance; Capacitance-voltage characteristics; Channel bank filters; Electrons; Ionizing radiation; Radiation effects; Silicon; Voltage; X-ray detectors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326531
Filename
4326531
Link To Document