Title :
Compact hybrid broadband GaN HEMT power amplifier based on feedback technique
Author :
Qiu, Y.J. ; Xu, Yan H ; Xu, R.M. ; Lin, W.G.
Author_Institution :
Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A broadband hybrid power amplifier using a gallium nitride (GaN) high electron mobility transistor (HEMT) is presented. A discrete GaN HEMT bare die with 1.25 mm of gate width is used, and a compact size of 8.3 × 12.7 mm is achieved by using a feedback technique based on lumped elements. The power amplifier operates from 100 to 1000 MHz, and shows more than 12.8 dB gain and higher than 30.7 dBm output power in the overall bandwidth. Power added efficiency of 61.3× was acquired at the mid-band frequency and more than 54.5× throughout the bandwidth.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; circuit feedback; gallium compounds; power HEMT; wide band gap semiconductors; GaN; PAE; compact hybrid broadband HEMT power amplifier; discrete bare die; efficiency 61.3 percent; feedback technique; frequency 100 MHz to 1000 MHz; high electron mobility transistor; lumped element; midband frequency; power added efficiency; size 1.25 mm;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.3910
