Compact hybrid broadband GaN HEMT power amplifier based on feedback technique

Author

Qiu, Y.J. ; Xu, Yan H ; Xu, R.M. ; Lin, W.G.

Author_Institution

Fundamental Sci. on EHF Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

49

Issue

5

fYear

2013

fDate

February 28 2013

Firstpage

372

Lastpage

374

Abstract

A broadband hybrid power amplifier using a gallium nitride (GaN) high electron mobility transistor (HEMT) is presented. A discrete GaN HEMT bare die with 1.25 mm of gate width is used, and a compact size of 8.3 × 12.7 mm is achieved by using a feedback technique based on lumped elements. The power amplifier operates from 100 to 1000 MHz, and shows more than 12.8 dB gain and higher than 30.7 dBm output power in the overall bandwidth. Power added efficiency of 61.3× was acquired at the mid-band frequency and more than 54.5× throughout the bandwidth.

Keywords

III-V semiconductors; UHF field effect transistors; UHF power amplifiers; circuit feedback; gallium compounds; power HEMT; wide band gap semiconductors; GaN; PAE; compact hybrid broadband HEMT power amplifier; discrete bare die; efficiency 61.3 percent; feedback technique; frequency 100 MHz to 1000 MHz; high electron mobility transistor; lumped element; midband frequency; power added efficiency; size 1.25 mm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2012.3910

Filename

6473966