DocumentCode :
80484
Title :
SEU Hardened Placement and Routing Based on Slack Reduction
Author :
SheXiao Xuan ; Li, Ning
Author_Institution :
Sch. of Microelectron., Fudan Univ., Shanghai, China
Volume :
61
Issue :
5
fYear :
2014
fDate :
Oct. 2014
Firstpage :
2741
Lastpage :
2744
Abstract :
This paper presents an SEU hardened placement and routing scheme targeted at an application specific integrated circuit. The proposed scheme reduces the positive slack so that the incorrect value caused by SEU in a flip-flop is less likely to be captured by a subsequent flip-flop. Experimental results demonstrate that the proposed scheme can not only reduce the SEU susceptibility of traditional non-hardened circuits but also improve the SEU resistance of hardened circuits further.
Keywords :
application specific integrated circuits; flip-flops; SEU hardened placement; application specific integrated circuit; positive slack; routing scheme; slack reduction; subsequent flip-flop; traditional nonhardened circuits; Circuit faults; Clocks; Delays; Latches; Routing; Single event upsets; Tunneling magnetoresistance; Hardened by design; placement and routing; radiation effects; single event upset (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2353853
Filename :
6906312
Link To Document :
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