Characterization of thin p-clad InGaAs single-quantum-well lasers

Low-ridge, thin p-clad InGaAs single-quantum-well (SQW) lasers with shiny Au contacts have been fabricated using a pulsed anodic oxidation technique. Although the ridge is very low (130 nm), the lateral refractive index step is sufficiently large to provide strong lateral waveguiding. Pulsed current measurements of threshold current, operating wavelength, and lateral far field as a function of ridge width are presented and compared with measured values reported for low-ridge and oxide-defined lasers fabricated from conventional thick p-clad material. The CW performance characteristics of five-micron-wide, low-ridge, thin p-clad lasers are shown to be comparable to those of conventional InGaAs SQW high-ridge waveguide lasers.<>