Title :
Vertical-cavity surface-emitting laser diodes with post-growth wavelength adjustment
Author :
Wipiejewski, T. ; Peters, M.G. ; Hegblom, E.R. ; Coldren, L.A.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
A novel vertical-cavity surface-emitting laser design enables the post-growth determination of the emission wavelength. The lasers employ a hybrid top mirror consisting of a semiconductor Bragg mirror and a metal reflector. The laser cavity length of each element in a 2-D array can be precisely adjusted after epitaxial growth by anodic oxidation and etching. An emission wavelength range of 25 nm is experimentally observed. Lasers operate under continuous wave conditions with threshold currents of about 6 mA and output powers up to 0.5 mW.<>
Keywords :
III-V semiconductors; aluminium compounds; anodisation; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical fabrication; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 0.5 mW; 2D array; 6 mA; AlAs-GaAs DBR; AuGeNi; GaAs; In/sub 0.175/Ga/sub 0.825/As-Al/sub 0.5/Ga/sub 0.5/As-GaAs; InGaAs quantum wells; anodic oxidation; continuous wave operation; emission wavelength range; etching; hybrid top mirror; laser cavity length; metal reflector; output power; post-growth wavelength adjustment; semiconductor Bragg mirror; threshold current; vertical-cavity surface-emitting laser design; Diode lasers; Epitaxial growth; Mirrors; Optical arrays; Optical design; Oxidation; Semiconductor laser arrays; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
