Optimization of planar Be-doped InGaAs VCSEL´s with two-sided output

Author

Reiner, G. ; Zeeb, E. ; Moller, B. ; Ries, M. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

7

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

730

Lastpage

732

Abstract

Threshold current, output power, wall-plug efficiency and operating voltage of epitaxially grown InGaAs-AlGaAs planar vertical-cavity surface-emitting lasers (VCSEL´s) are strongly influenced by the electrical and optical properties of the p-doped Bragg reflector. Here we study in some detail the dependence of output behavior on the composition, interface grading, and modulation doping of the Be-doped AlGaAs-GaAs Bragg reflector. Using optimized p-doped mirrors VCSEL´s with low threshold current densities of 300 A/cm/sup 2/, low driving voltages of 1.6 V and high wall-plug efficiencies of 17.6% are obtained. Transverse single-mode emitting devices show a record low emission linewidth of 30 MHz and a linewidth-power product of 2.2 mW/spl middot/MHz.<>

Keywords

III-V semiconductors; aluminium compounds; beryllium; gallium arsenide; indium compounds; ion implantation; laser mirrors; optimisation; quantum well lasers; semiconductor doping; surface emitting lasers; 1.6 V; 10 mum; 17.6 percent; AlGaAs:Be-GaAs; GaAs; In/sub 0.2/Ga/sub 0.8/As-Al/sub 0.3/Ga/sub 0.7/As; InGaAs strained quantum wells; InGaAs-AlGaAs planar vertical-cavity surface-emitting lasers; VCSEL optimization; emission linewidth; interface grading; linewidth-power product; low driving voltage; low threshold current densities; modulation doping; operating voltage; optimized p-doped mirrors VCSEL; output power; p-doped Bragg reflector; planar Be doping; planar proton implantation; solid source MBE; transverse single-mode emitting devices; two-sided output; wall-plug efficiency; Epitaxial layers; Indium gallium arsenide; Mirrors; Optical modulation; Power generation; Power lasers; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.393188

Filename

393188