Title :
High-responsivity optical FET´s fabricated on a FET-SEED structure
Author :
Jiafu Luo ; Grot, A. ; Psaltis, D.
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
fDate :
7/1/1995 12:00:00 AM
Abstract :
Optical detectors with responsivity of 1000 A/W and response time of 10 μs at 50 nW optical input power were fabricated using the AT&T FET-SEED process.
Keywords :
SEEDs; field effect integrated circuits; integrated optoelectronics; optical fabrication; photodetectors; phototransistors; 10 mus; 50 nW; FET-SEED; GaAs-AlGaAs; fabrication; optical FETs; optical detectors; response time; responsivity; Dark current; FETs; Gallium arsenide; Neurons; Optical arrays; Optical detectors; Optical device fabrication; Quantum well devices; Sensor arrays; Voltage control;
Journal_Title :
Photonics Technology Letters, IEEE
