Thickness-Dependent Performance of a Free-Standing Membrane LED

Author

Xin Li ; Dan Bai ; Zheng Shi ; Gangyi Zhu ; Miao Zhang ; Ziping Cao ; Hongbo Zhu ; Peter Grunberg ; Yongjin Wang

Author_Institution

Grunberg Res. Centre, Nanjing Univ. of Posts & Telecommun., Nanjing, China

Volume

7

Issue

3

fYear

2015

fDate

Jun-15

Firstpage

1

Lastpage

7

Abstract

We propose a free-standing membrane light-emitting diode (LED) on a GaN-on-silicon platform. Finite-difference time-domain (FDTD) simulation is used to investigate thickness-dependent performance of a free-standing membrane LED. The simulation results show that the light extraction efficiency is increased, and a directed emission pattern is obtained in free-standing membrane LEDs, which are experimentally implemented by removing the silicon substrate and back wafer thinning of the epitaxial layer. The light extraction efficiency and current-voltage (I-V) performance of membrane LEDs is increased in comparison with LEDs with silicon substrate.

Keywords

III-V semiconductors; elemental semiconductors; finite difference time-domain analysis; gallium compounds; integrated optoelectronics; light emitting diodes; silicon; wide band gap semiconductors; FDTD; GaN-Si; GaN-on-silicon platform; back wafer thinning; current-voltage performance; directed emission pattern; epitaxial layer; finite-difference time-domain simulation; free-standing membrane LED; light emitting diode; light extraction efficiency; thickness-dependent performance; Epitaxial growth; Gallium nitride; Light emitting diodes; Optical films; Silicon; Substrates; Light-emitting diodes; Thin film devices and applications; Thin-film devices and applications; light-emitting diodes (LEDs);

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2015.2438438

Filename

7114210