Title :
Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity
Author :
Ye, Zhengmao ; Campbell, Joe C. ; Chen, Zhonghui ; Kim, Eui-Tae ; Madhukar, Anupam
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
An InAs/AlGaAs quantum-dot infrared photodetector based on bound-to-bound intraband transitions in undoped InAs quantum dots is reported. AlGaAs blocking layers were employed to achieve low dark current. The photoresponse peaked at 6.2 μm. At 77 K and -0.7 V bias, the responsivity was 14 mA/W and the detectivity, D*, was 1010 cm·Hz12//W.
Keywords :
III-V semiconductors; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; infrared detectors; self-assembly; semiconductor quantum dots; 0.7 V; 14 mA; 6.2 micron; 77 K; AlGaAs; AlGaAs blocking layers; InAs; InAs self-assembled quantum-dot infrared photodetectors; InAs-AlGaAs; InAs/AlGaAs quantum-dot infrared photodetector; bound-to-bound intraband transitions; detectivity; high detectivity; low dark current; normal-incidence; photoresponse; responsivity; undoped InAs quantum dots; Atomic force microscopy; Dark current; Gallium arsenide; Indium gallium arsenide; Infrared detectors; Infrared spectra; Night vision; Photodetectors; Quantum dots; Transmission electron microscopy;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.802159
