Theory of operation of the double-heterostructure optoelectronic switch operating as a laser

Author

Taylor, G.W. ; Cai, Jianhong

Author_Institution

Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA

Volume

38

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1242

Lastpage

1252

Abstract

A theoretical description for the operation of the thyristor laser is developed based upon the unique current equations for the thyristor ON-state conduction. The laser equations are based upon the assumption of no k selection and allow closed-form solutions for the Fermi energies and the lasing frequency. The results are compared to the corresponding results for the p-n diode laser, and the thyristor is shown to have a slight advantage in threshold current and efficiency. The results are compared to experiment, and favorable agreement with the predictions is obtained.

Keywords

III-V semiconductors; electro-optical switches; gallium arsenide; indium compounds; photothyristors; quantum well lasers; semiconductor device models; semiconductor quantum wells; Fermi energies; InGaAs; InGaAs strained QW structure; ON-state conduction; closed-form solutions; double-heterostructure optoelectronic switch; efficiency; laser; laser equations; lasing frequency; p-n diode laser; semiconductor laser; threshold current; thyristor laser; unique current equations; Charge carrier processes; Equations; Laser modes; Laser theory; Semiconductor lasers; Surface emitting lasers; Switches; Threshold current; Thyristors; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2002.802163

Filename

1027768