Title :
Theory of operation of the double-heterostructure optoelectronic switch operating as a laser
Author :
Taylor, G.W. ; Cai, Jianhong
Author_Institution :
Dept. of Electr. & Comput. Eng., Connecticut Univ., Storrs, CT, USA
fDate :
9/1/2002 12:00:00 AM
Abstract :
A theoretical description for the operation of the thyristor laser is developed based upon the unique current equations for the thyristor ON-state conduction. The laser equations are based upon the assumption of no k selection and allow closed-form solutions for the Fermi energies and the lasing frequency. The results are compared to the corresponding results for the p-n diode laser, and the thyristor is shown to have a slight advantage in threshold current and efficiency. The results are compared to experiment, and favorable agreement with the predictions is obtained.
Keywords :
III-V semiconductors; electro-optical switches; gallium arsenide; indium compounds; photothyristors; quantum well lasers; semiconductor device models; semiconductor quantum wells; Fermi energies; InGaAs; InGaAs strained QW structure; ON-state conduction; closed-form solutions; double-heterostructure optoelectronic switch; efficiency; laser; laser equations; lasing frequency; p-n diode laser; semiconductor laser; threshold current; thyristor laser; unique current equations; Charge carrier processes; Equations; Laser modes; Laser theory; Semiconductor lasers; Surface emitting lasers; Switches; Threshold current; Thyristors; Vertical cavity surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2002.802163
