Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

Author

Negoro, Yuuki ; Miyamoto, Nao ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1505

Lastpage

1510

Abstract

Characteristics of p-n junction fabricated by aluminum-ion (Al⁺) or boron-ion (B⁺) implantation and high-dose Al⁺-implantation into 4H-SiC (0001) have been investigated. By the combination of high-dose (4×10¹⁵ cm^-2) Al⁺ implantation at 500°C and subsequent annealing at 1700°C, a minimum sheet resistance of 3.6 kΩ/□ (p-type) has been obtained. Three types of diodes with planar structure were fabricated by employing Al+ or B+ implantation. B ⁺-implanted diodes have shown higher breakdown voltages than Al⁺-implanted diodes. A SiC p-n diode fabricated by deep B+ implantation has exhibited a high breakdown voltage of 2900 V with a low on-resistance of 8.0 mΩcm² at room temperature. The diodes fabricated in this study showed positive temperature coefficients of breakdown voltage, meaning avalanche breakdown. The avalanche breakdown is discussed with observation of luminescence

Keywords

aluminium; avalanche breakdown; boron; current density; ion implantation; photoluminescence; semiconductor device breakdown; semiconductor diodes; silicon compounds; wide band gap semiconductors; 1700 degC; 2900 V; 500 degC; SiC; SiC:Al; SiC:B; annealing; avalanche breakdown; breakdown voltage; breakdown voltages; ion implantation; luminescence; on-resistance; p-n diodes; planar structure; positive temperature coefficients; sheet resistance; Aluminum; Annealing; Avalanche breakdown; Boron; Diodes; Electric breakdown; Ion implantation; Luminescence; Silicon carbide; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802637

Filename

1027829