Title :
Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation
Author :
Negoro, Yuuki ; Miyamoto, Nao ; Kimoto, Tsunenobu ; Matsunami, Hiroyuki
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fDate :
9/1/2002 12:00:00 AM
Abstract :
Characteristics of p-n junction fabricated by aluminum-ion (Al+) or boron-ion (B+) implantation and high-dose Al+-implantation into 4H-SiC (0001) have been investigated. By the combination of high-dose (4×1015 cm-2) Al+ implantation at 500°C and subsequent annealing at 1700°C, a minimum sheet resistance of 3.6 kΩ/□ (p-type) has been obtained. Three types of diodes with planar structure were fabricated by employing Al+ or B+ implantation. B +-implanted diodes have shown higher breakdown voltages than Al+-implanted diodes. A SiC p-n diode fabricated by deep B+ implantation has exhibited a high breakdown voltage of 2900 V with a low on-resistance of 8.0 mΩcm2 at room temperature. The diodes fabricated in this study showed positive temperature coefficients of breakdown voltage, meaning avalanche breakdown. The avalanche breakdown is discussed with observation of luminescence
Keywords :
aluminium; avalanche breakdown; boron; current density; ion implantation; photoluminescence; semiconductor device breakdown; semiconductor diodes; silicon compounds; wide band gap semiconductors; 1700 degC; 2900 V; 500 degC; SiC; SiC:Al; SiC:B; annealing; avalanche breakdown; breakdown voltage; breakdown voltages; ion implantation; luminescence; on-resistance; p-n diodes; planar structure; positive temperature coefficients; sheet resistance; Aluminum; Annealing; Avalanche breakdown; Boron; Diodes; Electric breakdown; Ion implantation; Luminescence; Silicon carbide; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2002.802637
