Suppression of SiN-induced boron penetration by using SiH-free silicon nitride films formed by tetrachlorosilane and ammonia

Author

Tanaka, Masayuki ; Saida, Shigehiko ; Mizushima, Ichiro ; Inoue, Fumihiko ; Kojima, Manabu ; Tanaka, Tetsu ; Nakanishi, Toshiro ; Suguro, Kyoichi ; Tsunashima, Yoshitaka

Author_Institution

Process & Manuf. Eng. Center, Toshiba Corp., Kanagawa, Japan

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1526

Lastpage

1531

Abstract

Applications of SiH-free silicon nitride (SiN) films, formed by tetrachlorosilane (TCS) and ammonia, have been proved to effectively suppress the SiN-induced boron penetration. The SiN-induced boron penetration has been investigated in detail by using boron-doped polysilicon gated capacitors with several kinds of thick SiN films. It was clarified for the first time that the SiN-induced boron penetration becomes worse with SiH content in SiN films and deposition technique of SiH-free TCS-SiN films is essential for realization of the high-performance PMOSFETs

Keywords

CVD coatings; MOSFET; characteristics measurement; semiconductor device measurement; semiconductor device reliability; silicon compounds; DRAMs; PMOSFETs; Si:B; SiN; ammonia; boron penetration; deposition technique; hard mask; polysilicon gated capacitors; scaled technology; tetrachlorosilane; Boron; Capacitors; Electrodes; Fabrication; Helium; Hydrogen; MOSFETs; Manufacturing processes; Semiconductor films; Silicon compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802630

Filename

1027832