DocumentCode :
805558
Title :
Rare-earth-doped GaN switchable color electroluminescent devices
Author :
Heikenfeld, Jason ; Steckl, Andrew J.
Author_Institution :
Nanoelectronics Lab., Cincinnati Univ., OH, USA
Volume :
49
Issue :
9
fYear :
2002
fDate :
9/1/2002 12:00:00 AM
Firstpage :
1545
Lastpage :
1551
Abstract :
Switchable color (SC) light emission has been obtained from thin-film electroluminescent devices (ELDs) which use green Er- and red Eu-doped GaN phosphors. These two-electrode SCELDs can switch color through variation of applied bias. Different SCELD structures, which share in common a stacked GaN: Er/GaN: Eu phosphor layer, can be implemented for use with DC or AC operation. A single SCELD can emit green (537/558 nm), red (622 nm), yellow, and orange. For the DC-SCELD, an electrically rectifying GaN/p-Si interface allows polarity-dependent current paths, which induce selective luminescence of red or green phosphor layers. For the AC-SCELD, as the bias frequency is increased, bright red emission from GaN: Eu saturates while green emission from GaN: Er increases and becomes dominant. The AC-SCELD exhibits brightness levels >10 cd/m2 and can change chromaticity coordinates by as much as Δx>0.32 and Δy>0.33. Application of these devices to switching between other visible and/or infrared wavelengths is envisioned based on appropriate choice of luminescent dopants in the GaN layers
Keywords :
III-V semiconductors; brightness; colour displays; electro-optical switches; electroluminescent devices; erbium; europium; flat panel displays; gallium compounds; phosphors; thin film devices; wide band gap semiconductors; 537 nm; 558 nm; 622 nm; AC operation; DC operation; GaN colour electroluminescent devices; GaN-Si; GaN:Er-GaN:Eu; IR wavelengths; applied bias variation; backlights; bias frequency; brightness levels; chromaticity coordinates; electrically rectifying GaN/p-Si interface; electro-optic characteristics; green Er-doped GaN phosphors; indicators; infrared wavelengths; luminescent dopants; multicolour flat panel displays; polarity-dependent current paths; rare-earth-doped GaN; red Eu-doped GaN phosphors; stacked GaN:Er/GaN:Eu phosphor layer; switchable color electroluminescent devices; switchable color light emission; thin-film electroluminescent devices; two-electrode device; visible wavelengths; Electrodes; Electroluminescent devices; Erbium; Frequency; Gallium nitride; Luminescence; Organic light emitting diodes; Phosphors; Switches; Thin film devices;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2002.802663
Filename :
1027835
Link To Document :
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