An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs

Author

Li, H. Philip ; Hartin, Olin L. ; Ray, Marcus

Author_Institution

DigitalDNA, Motorola Inc., Tempe, AZ, USA

Volume

49

Issue

9

fYear

2002

fDate

9/1/2002 12:00:00 AM

Firstpage

1675

Lastpage

1678

Abstract

An updated model on the temperature dependent two-terminal breakdown mechanisms coupling both impact ionization (II) and thermionic field emission (TFE) for HEMTs is presented in this paper. This model depicts the interplay between TFE and II mechanisms. Examples of temperature dependence of reverse gate current are discussed. It is important that the coupling mechanism between TFE and II at elevated temperature should be considered, particularly when designing devices for high-power applications

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; power HEMT; semiconductor device breakdown; semiconductor device models; thermionic emission; AlGaAs-InGaAs; AlGaAs/InGaAs HEMTs; elevated temperature; high-power applications; impact ionization; reverse gate current; temperature dependent breakdown coupling model; thermionic field emission; two-terminal breakdown mechanisms; updated model; Current measurement; Electric breakdown; HEMTs; Impact ionization; Indium gallium arsenide; MODFETs; Schottky barriers; Temperature dependence; Thermionic emission; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2002.802651

Filename

1027866