Title :
Hole Mobility Enhancement in Compressively Strained
pMOSFETs
Author :
Gupta, Swastik ; Huang, Yi-Pai ; Kim, Youngjae ; Sanchez, E. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.
Keywords :
CVD coatings; MOSFET; epitaxial growth; germanium compounds; hole mobility; Ge0.93Sn0.07; compressively strained pMOSFET; epitaxial growth; high inversion charge density; hole mobility enhancement; low thermal budget process; Germanium tin (GeSn); hole mobility; pMOSFET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2259573