مرکز منطقه ای اطلاع رساني علوم و فناوري - Hole Mobility Enhancement in Compressively Strained <formula formulatype="inline"> <img src="/images/tex/20964.gif" alt="{\\rm Ge}_{0.93}{\\rm Sn}

DocumentCode :

80580

Title :

Hole Mobility Enhancement in Compressively Strained ${\\rm Ge}_{0.93}{\\rm Sn}_{0.07}$ pMOSFETs

Author :

Gupta, Swastik ; Huang, Yi-Pai ; Kim, Youngjae ; Sanchez, E. ; Saraswat, Krishna C.

Author_Institution :

Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA

Volume :

Issue :

fYear :

2013

fDate :

Jul-13

Firstpage :

831

Lastpage :

833

Abstract :

Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.

Keywords :

CVD coatings; MOSFET; epitaxial growth; germanium compounds; hole mobility; Ge_0.93Sn_0.07; compressively strained pMOSFET; epitaxial growth; high inversion charge density; hole mobility enhancement; low thermal budget process; Germanium tin (GeSn); hole mobility; pMOSFET;

fLanguage :

English

Journal_Title :

Electron Device Letters, IEEE

Publisher :

ieee

ISSN :

0741-3106

Type :

jour

DOI :

10.1109/LED.2013.2259573

Filename :

6521409

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=80580