DocumentCode :
80580
Title :
Hole Mobility Enhancement in Compressively Strained {\\rm Ge}_{0.93}{\\rm Sn}_{0.07} pMOSFETs
Author :
Gupta, Swastik ; Huang, Yi-Pai ; Kim, Youngjae ; Sanchez, E. ; Saraswat, Krishna C.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Volume :
34
Issue :
7
fYear :
2013
fDate :
Jul-13
Firstpage :
831
Lastpage :
833
Abstract :
Germanium tin (GeSn) pMOSFETs with channel Sn composition of 7% are fabricated using a low thermal budget process. GeSn pMOSFETs show enhancement in hole mobility over control Ge devices by 85% in high inversion charge density regime. Hole mobility improvement observed in GeSn channel pMOSFETs compared with Ge control is due to the biaxial compressive strain in GeSn resulting from epitaxial growth of GeSn thin films on relaxed Ge buffer layers.
Keywords :
CVD coatings; MOSFET; epitaxial growth; germanium compounds; hole mobility; Ge0.93Sn0.07; compressively strained pMOSFET; epitaxial growth; high inversion charge density; hole mobility enhancement; low thermal budget process; Germanium tin (GeSn); hole mobility; pMOSFET;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2013.2259573
Filename :
6521409
Link To Document :
بازگشت